IPD65R380C6 datasheet

Маркировка

IPD65R380C6
Производитель

Infineon Technologies
Описание

Infineon Technologies IPD65R380C6 Continuous Drain Current: 10.6 A Current - Continuous Drain (id) @ 25?° C: 10.6A Drain To Source Voltage (vdss): 650V Drain-source Breakdown Voltage: 700 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 39nC @ 10V Gate-source Breakdown Voltage: 20 V Input Capacitance (ciss) @ Vds: 710pF @ 100V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Power - Max: 83W Power Dissipation: 83 W Rds On (max) @ Id, Vgs: 380 mOhm @ 3.2A, 10V Resistance Drain-source Rds (on): 0.34 Ohms Series: CoolMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 3.5V @ 320?µA Other Names: IPD65R380C6TR
Количество страниц

19 шт.
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PDF
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Размер файла

1,25 MB